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IRLML2502TRPBF;中文规格书,Datasheet资料

PD - 94892C

IRLML2502PbF
HEXFET? Power MOSFET
l l l l l l l l

Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free

*   ' 6 

VDSS = 20V RDS(on) = 0.045?

Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3?, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Micro3?

Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current ? Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range

Max.
20 4.2 3.4 33 1.25 0.8 0.01 ± 12 -55 to + 150

Units
V A W W/°C V °C

Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient?

Typ.
75

Max.
100

Units
°C/W

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IRLML2502PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
?V(BR)DSS/?TJ

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

Min. 20 ––– ––– ––– 0.60 5.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––

Typ. ––– 0.01 0.035 0.050 ––– ––– ––– ––– ––– ––– 8.0 1.8 1.7 7.5 10 54 26 740 90 66

Max. Units Conditions ––– V VGS = 0V, ID = 250?A ––– V/°C Reference to 25°C, ID = 1mA 0.045 VGS = 4.5V, ID = 4.2A ? ? 0.080 VGS = 2.5V, ID = 3.6A ? 1.2 V VDS = VGS, ID = 250?A ––– S VDS = 10V, ID = 4.0A 1.0 VDS = 16V, VGS = 0V ?A 25 VDS = 16V, VGS = 0V, TJ = 70°C -100 VGS = -12V nA 100 VGS = 12V 12 ID = 4.0A 2.7 nC VDS = 10V 2.6 VGS = 5.0V ? ––– VDD = 10V ––– ID = 1.0A ns ––– RG = 6? ––– RD = 10? ? ––– VGS = 0V ––– pF VDS = 15V ––– ? = 1.0MHz

Source-Drain Ratings and Characteristics
IS
ISM

VSD trr Q rr

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ? Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Min. Typ. Max. Units ??? ??? ––– ––– ––– ??? ??? ––– 16 8.6 1.3 A 33 1.2 24 13 V ns nC

Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 1.3A, VGS = 0V TJ = 25°C, IF = 1.3A di/dt = 100A/?s ?

D

S

?

Notes:

? Repetitive rating; pulse width limited by ? Pulse width ≤ 300?s; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 11 )

? Surface mounted on FR-4 board, t ≤ 5sec.

2

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IRLML2502PbF
100
VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP

100

I D , Drain-to-Source Current (A)

2.25V
10

I D , Drain-to-Source Current (A)

VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP

10

2.25V

1 0.1

20?s PULSE WIDTH TJ = 25 °C
1 10 100

1 0.1

20?s PULSE WIDTH TJ = 150 °C
1 10 100

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.0

RDS(on) , Drain-to-Source On Resistance (Normalized)

ID = 4.0A

I D , Drain-to-Source Current (A)

1.5

TJ = 25 ° C

1.0

TJ = 150 ° C

0.5

10 2.0

V DS = 15V 20?s PULSE WIDTH 2.4 2.8 3.2 3.6 4.0

0.0 -60 -40 -20

VGS = 4.5V
0 20 40 60 80 100 120 140 160

VGS , Gate-to-Source Voltage (V)

TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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IRLML2502PbF
1200

1000

VGS , Gate-to-Source Voltage (V)

VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd

10

ID = 4.0A VDS = 10V

8

C, Capacitance (pF)

800

Ciss

6

600

4

400

200

2

0

Coss Crss
1 10 100

0

0

4

8

12

16

VDS , Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

100

1000

ISD , Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED BY RDS(on)

10

TJ = 150 ° C

I D , Drain Current (A)

100

10us 10 100us 1ms 1 10ms

1

TJ = 25 ° C

0.1 0.4

V GS = 0 V
0.6 0.8 1.0 1.2 1.4

0.1 0.1

TA = 25 ° C TJ = 150 ° C Single Pulse
1 10

100

VSD ,Source-to-Drain Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRLML2502PbF
4.0

ID , Drain Current (A)

3.0

2.0

1.0

0.0

25

50

TC , Case Temperature ( °C)

75

100

125

150

Fig 9. Maximum Drain Current Vs. Case Temperature

1000

Thermal Response (Z thJA )

100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2

0.1 0.00001

t1 , Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLML2502PbF
RDS ( on ) , Drain-to-Source On Resistance ( ? )
0.05

0.30

RDS(on) , Drain-to -Source Voltage ( ? )

VGS = 2.5V 0.20

0.04

Id = 4.0A
0.03

0.10 VGS = 4.5V

0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

0.00 0 10 20 30 40 iD , Drain Current ( A )

VGS, Gate -to -Source Voltage ( V )

Fig 11. On-Resistance Vs. Gate Voltage

Fig 12. On-Resistance Vs. Drain Current

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IRLML2502PbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
6 D A 5

DIMENSIONS
SYMBOL
A A2 C

MILLIMETERS MIN MAX

INCHES MIN MAX

3 6 E1 1 2

E
0.15 [0.006] M C B A
0.10 [0.004] C

A1

5

B

e e1
NOTES:

3X b
0.20 [0.008] M C B A

H 4

L1

Recommended Footprint

c

A A1 A2 b c D E E1 e e1 L L1 L2

0.972
0.950

0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0

1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8

## 0.0004 # "$ #  ! ! " '    ! '"  # #& $$ "& 7T8 &$ 7T8?  % !# ! REF   BSC
0 8

"$

L2 3X L 7

0.802

2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

1.900

Micro3 (SOT-23/TO-236AB) Part Marking Information
I??r?)?Uuv???h????h?xv?t?v?s???h?v???h??yvr?????qr?vpr?????q?prq?hs?r??!!%!
96U@?8P9@ Q6SU?IVH7@S X?2? !%?DA?QS@8@9@9?7`?G6TU?9DBDU?PA?86G@I96S?`@6S G@69?AS@@ `@6S ! !! !" !# !$ !% !& !' !( !  ` ! " # $ % & ' (  XPSF X@@F  ! " # X 6 7 8 9

8??XDS@ GPU?8P9@ C6GPB@I?AS@@ Y?2?Q6SU?IVH7@S?8P9@?S@A@S@I8@) 6?2?DSGHG!#! 7?2?DSGHG!'" 8?2?DSGHG%"! 9?2?DSGHG$ " @?2?DSGHG%#! A?2?DSGHG%# B?2?DSGHG!$! C?2?DSGHG$!" D??2?DSGHG" E?2?DSGHG!" F?2?DSGHG  G?2?DSGHG% H?2?DSGHG# I?2?DSGHG!% Q?2?DSGHG(" S?2?DSGHG(""

!# !$ !% XPSF X@@F !& !' !( "

Y ` a

X?2?!&$!?DA?QS@8@9@9?7`?6?G@UU@S `@6S ! !! !" !# !$ !% !& !' !( !  ` 6 7 8 9 @ A B C E F X 6 7 8 9

$

Y

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRLML2502PbF
Micro3? Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.32 ( .051 ) 1.12 ( .045 )

1.85 ( .072 ) 1.65 ( .065 )

TR

3.55 ( .139 ) 3.45 ( .136 )

8.3 ( .326 ) 7.9 ( .312 )

FEED DIRECTION

4.1 ( .161 ) 3.9 ( .154 )

1.1 ( .043 ) 0.9 ( .036 )

0.35 ( .013 ) 0.25 ( .010 )

178.00 ( 7.008 ) MAX.

9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/2010

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分销商库存信息:
IR IRLML2502TRPBF


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